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Ion-sensitive field - effect transistor (ISFET) biosensors were fabricated with a pH-sensitive BaxSr1−xTiO3 membrane on silicon substrates in an Electrolyte-Insulator-Semiconductor (EIS) structure. To investigate the effects of annealing in N2 ambient, multiple material analyses including XRD and AFM were performed. Results indicate that the annealing treatment might deteriorate the crystallization...
Electrocorticography (ECoG) neural signal recording has been widely used for recording brain electrical signals in brain research and clinical applications for disease diagnostic. In this work, we developed a flexible and re-pluggable ECoG electrode based on chromium-silver-chromium (Cr-Ag-Cr) structure which was deposited on 50 μm thick polymide (PI) foil. This electrode was used in neural signal...
The growth of Bi2Se3 nanostructures by physical vapor deposition in presence or absence of Au catalysts on Si and mica substrates is investigated. In the presence of Au nanodroplets on substrate surfaces, the growth of Bi2Se3 nanostructures in diverse crystallographic orientations is initiated via a catalyst-assisted process at low source flux condition. At elevated flux supply, nearly free-standing...
Infrared spectroscopic analyses of reactively formed La-silicate gate dielectrics between La2O3 and Si substrates are conducted with the attenuated total reflection configuration. The formation of a La-silicate interface layer at the surface of Si(100) has been confirmed with an annealing temperature of 300 °C and the layer has grown with increasing the annealing temperature. The strain in the SiO...
Electrical and reliability characteristics of Ge pMOSFETs with H2, NH3 and NH3+H2 plasma treatments were studied in this work. The GeOx interfacial layer (IL) formation and HfON dielectric deposition were performed in atomic layer deposition (ALD) chamber. H2 and NH3 plasma treatments were in-situ performed on GeOx IL in ALD chamber. The equivalent oxide thickness (EOT) can be scaled down by H2 plasma...
Cr2O3/Cr thin films were deposited on glass substrate via sputtering method at room temperature by using Cr metal target. The deposited films were annealed under various temperatures ranging from 500 to 700 °C in air atmosphere. The structural, chemical, electrical and thermoelectric properties of the annealed Cr2O3/Cr nanocomposites were characterized. Cr2O3/Cr has shown a maximum thermoelectric...
In this study, Ni31Si69, Ni43Si57 and Ni63Si37 thin films with the thickness of 16 nm were deposited at room temperature by co-sputtering using Ni and Si targets. From the result of reflectivity-temperature measurement, it was found the NiSi layers possessed two temperature ranges of reflectivity change, i.e. 150–270 °C and 320–370 °C. Microstructural analysis indicated that the NiSi2 nano-crystalline...
Operation characteristics of polycrystalline silicon (poly-Si) nanowire (NW) charge-trapping (CT) flash memory devices with a SiGe and a Ge buried channel are studied and compared in this work. The poly-Si NW devices with a Ge buried channel show faster programming and erasing speeds as compared to those with a SiGe one due to a lower energy barrier in tunneling layer with more Ge composition. The...
A bipolar-type one diode–one resistor (1D1R) memory device is proposed and demonstrated by integrating a Ni/TiO2/Ti diode and an Al/Strontium Titanate Nickelate (STN)/Pt bipolar resistive random access memory cell to suppress undesired sneak current in a cross-point array. Uniform self-compliance resistive-switching characteristics can be achieved by reverse bias current of the Ni/TiO2/Ti diode. Experimental...
The structure and transport properties of Mn0.98Cr0.02Te and MnTe films prepared by pulsed laser deposition were investigated. The metal-semiconductor transition was observed below the Néel temperature of MnTe. A diode-like behavior near the transition temperature was shown in the voltage-current characteristics for these films grown with incompletely connected islands. The rough surface was proven...
Super short channel control (sub-threshold swing = 95 mV/dec) in Ge n-type Fin Field-Effect Transistors (n-FinFETs) is achieved through the promising gate stack characteristics of gate leakage (Jg)-equivalent-oxide-thickness (EOT) and ultra-high k-value (∼312) with the implement of the magnetic gate stack scheme. On the other hand, the negative capacitance effect is also observed in the magnetic Ge...
Polypyrrole films, deposited on glass or silicon substrate by plasma polymerization under different radio frequency power and pyrrole flow rates, were investigated in this study. The plasma condition was monitored by optical emission spectrometer and films' properties and functions were assessed by following instruments: surface profiler for the average thickness and deposition rate; Fourier transform...
Capacitance-voltage (CV) characteristics were investigated for MOS devices with ZrO2 and HfO2 high-k dielectrics using pulse technique and LCR meter. Opposite relative positions of the forward and reverse traces were observed for the CV curves extracted from the two techniques. This unusual phenomenon was believed to be caused by the interface dipoles formed at high-k/SiOx interface, since it was...
A vacuum annealing was conducted on c-plane sapphire substrate in a plasma-assisted MBE system prior to the epitaxial growth of β-Ga2O3 film. Accordingly, both the crystal structures of epitaxial films and the device performance of fabricated metal-semiconductor-metal photodetectors were comparatively investigated based on the as-supplied and annealed sapphire substrates. The AFM result showed a large...
Anomalous enhancement of phosphorus diffusion in pre-amorphized ultrashallow junctions was observed when the dose for carbon co-implantation was increased to 5 × 1015 cm−2 at 5 keV. Simulation was performed to verify the diffusion mechanism and mimic the experimental box-shaped profiles of phosphorus. The enhanced diffusion was dominated by the rapid diffusion in the residual amorphous layer as the...
In this study, we proposed a metal-oxide high-k-oxide-silicon (MOHOS) memory device using a nickel oxide film as the charge trapping layer, and studied the effect of post-deposition rapid thermal annealing (RTA) on the physical and electrical properties. The physical properties were investigated via multiple material analysis techniques such as X-ray diffraction and atomic force microscopy. The optimal...
Humidity is a vital physical quantity which is extremely important to production quality control, reliability of electronics, and health of human being. This paper proposed a humidity sensor based on quartz crystal microbalance (QCM) using graphene oxide as a sensitive layer, and investigated the characteristics of sensor according to the shift of quality factor (Q factor) as well as resonant frequency...
Monolayer tungsten disulfide is a very promising two-dimensional material for future transistor technology. Monolayer tungsten disulfide, owing to the unique electronic properties of its atomically thin two-dimensional layered structure, can be made into a high-performance transistor device. In this paper, we focus on band-structure and carrier mobility calculations for monolayer tungsten disulfide...
Benefiting from the good etching and patterning feasibilities and excellent electrical properties, platinum silicide attracts renewed attention as a suitable candidate for the next generation complementary metal-oxide-semiconductor (CMOS) technologies recently. This work focuses on the effects of the trimethylaluminum (TMA) pretreatment on the Plasma Enhanced Atomic Layer Deposition (PEALD) growth...
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